Application of the Symmetric Doped Double-Gate Model in Circuit Simulation Containing Double-Gate Graded-Channel Transistors
نویسندگان
چکیده
منابع مشابه
Electron mobility in double gate silicon on insulator transistors: Symmetric-gate versus asymmetric-gate configuration
We have studied electron mobility behavior in asymmetric double-gate silicon on insulator ~DGSOI! inversion layers, and compared it to the mobility in symmetric double-gate silicon on insulator devices, where volume inversion has previously been shown to play a very important role, being responsible for the enhancement of the electron mobility. Poisson’s and Schroedinger’s equations have been s...
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ژورنال
عنوان ژورنال: Journal of Integrated Circuits and Systems
سال: 2010
ISSN: 1872-0234,1807-1953
DOI: 10.29292/jics.v5i2.316